1/1 Layered Hybrid Perovskites for Resistive Switching Memories and Artificial Synapses in Neuromorphic Computing
Jovana Millic a
a Department of Chemistry, University of Turku, 20500 Turku, Finland.
Proceedings of MATSUS Spring 2026 Conference (MATSUSSpring26)
D7 Low-Dimenisonal Halide Perovskites – Exploring Unique Challenges and Opportunities in 0D, 1D and 2D Materials
Barcelona, Spain, 2026 March 23rd - 27th
Organizers: Kunal Datta, Silvia Motti and Ajay Ram Srimath Kandada
Invited Speaker, Jovana Millic, presentation 667
Publication date: 15th December 2025

Hybrid organic-inorganic halide perovskites are mixed ionic-electronic semiconductors with
exceptional optoelectronic characteristics. However, their ion migration contributes to the
instability under device operating conditions, such as voltage bias and light, limiting their
application.[1] The suppression of ionic migration has been critical to enhancing operational
stability, such as by incorporating organic moieties into halide perovskite frameworks to form
layered perovskite architectures that are more resilient during device operation.[2,3]
While this remains an ongoing challenge in photovoltaics, the control of mixed conductivities
in response to external stimuli has provided an opportunity for more energy-efficient resistive
switching memories or memristors and artificial synapses in brain-inspired computing.[2,3]
We explore the resistive switching of arylammonium-based layered hybrid perovskites for
non-volatile memories and neuromorphic computing[2] and demonstrate their utility in
mixed-dimensional perovskite heterostructures incorporating perfluoroarene moieties for
memristive solar cells.[3] We further reveal the ability to replace toxic lead cations in lead-free
layered halide perovskite memories[4] for a new generation of neuromorphic systems[4,5].

Reference
1. M. H. Futscher, J. V. Milić, ‘Mixed Conductivity of Hybrid Halide Perovskites: Emerging Opportunities and
Challenges’, Front. Energy Res. 2021, 9, 629074.
2. M. M. Ganaie, G. Bravetti, S. Sahu, M. Kumar, J. V. Milić, ‘Resistive switching in benzylammonium-based
Ruddlesden–Popper layered hybrid perovskites for non-volatile memory and neuromorphic computing’,
Mater. Adv. 2024, 5, 1880–1886.
3. M. Loizos, K. Rogdakis, W. Luo, P. Zimmermann, A. Hinderhofer, J. Lukić, M. Tountas, F. Schreiber, J. V.
Milić, E. Kymakis, ‘Resistive switching memories with enhanced durability enabled by mixed-dimensional
perfluoroarene perovskite heterostructures’, Nanoscale Horiz. 2024, 9, 1146–1154.
4. M. Ghasemi, P. Karsili, A. Mishra, M. R. Golobostanfard, J. V. Milić, ‘Molecular engineering of layered halide
double perovskites: challenges and opportunities in optoelectronics and beyond’, Adv. Energy Mater. 2025,
2502693.
5. M. M. Ganaie, et al. 2025, manuscript under revision.


Acknowledgements. The authors appreciate the support from the SUSMAT program and the Research Council of
Finland (Project No. 362642, SupraPV), as well as from the European Research Council (ERC) under the European
Union’s Horizon 2020 research and innovation programme (Grant agreement No. 101114653, SmartHyMat).

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