Publication date: 15th December 2025
Quantum dots (QDs) are a new generation of solution-processable optoelectronic materials. They can be synthesized in large batches through solution-phase methods and formulated into conductive inks compatible with scalable printing techniques such as doctor-blading and spray-coating for the deposition of large-area thin films. Owing to their strong quantum-confinement effect, the bandgap of typical PbS QDs can be tuned by size, enabling broadband absorption that spans the short-wave infrared (SWIR, 300–2500 nm). This makes them ideal candidates for low-cost SWIR photodetectors and imaging devices. Furthermore, QDs can serve as bottom-cell absorbers in tandem architectures with crystalline silicon or perovskites, compensating for the transmission losses of low-energy photons.
However, current QD photovoltaic and photodetection materials still face several technical bottlenecks, including high fabrication cost, high defect density, and poor colloidal stability. To address these challenges, we propose a new strategy of directly synthesizing conductive QD inks in polar solvents using inorganic ion ligands. This approach completely eliminates the ligand-exchange process, substantially simplifying device fabrication; meanwhile, it enables in-situ passivation during QD nucleation and growth, offering the potential to further enhance their optoelectronic properties.
This presentation will introduce our recent progress on the direct synthesis of infrared QD conductive inks and the fabrication of their optoelectronic conversion devices, aiming to provide new insights for the scalable production of QD optoelectronic materials and devices.
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