Publication date: 15th December 2025
Colloidal quantum dots (QDs) have become prominent classical and quantum light sources. Despite the rapid rise of novel QD materials, such as those made of perovskites, there is a vast potential to further progress in more conventional QD material, particularly metal pnictides. Despite successful commercialization, InP NCs still lack synthetic versatility and robustness, as seen, for instance, in the continued quest to replace a commonly used, pyrophoric, and expensive tris(trimethylsilyl)phosphine precursor. We have developed a solid-state, nonpyrophoric, and synthetically readily accessible acylphosphines as convenient phosphorus precursors for the synthesis of InP NCs [1]. The proposed acylpnictide route is anticipated to foster the development of other metal phosphide and metal arsenide NCs.
Colloidal III-V arsenide quantum dots (QDs) are promising low-toxicity, solution-processable materials for near-infrared optoelectronics, yet their development has been constrained by the scarcity of suitable precursors and proneness to oxidation. Existing routes either rely on highly reactive but toxic, pyrophoric group-14-substituted arsines, or on safer aminoarsines that require in situ reduction and cause staggered rather than a single burst nucleation. We introduce aluminum tris[bis(mesitoyl)arsenide] as a nonpyrophoric and air-stable precursor that, upon nucleophilic attack, directly delivers the formally As3- species for producing InAs QDs [2].
The presentation will encompass the work of my interdisciplinary team and diverse international collaborators, whose names will be appropriately mentioned in the presentation and footnotes.
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