Publication date: 15th December 2025
Herein, we propose a new strategy that uses kinetic energy to facilitate charge multiplication in high-detectivity CQD-based IRPDs. Accelerated by strong electric fields within the CQD layer, electrons gain kinetic energy and subsequently transfer this excess energy to neighboring valence electrons through electron–electron collisions, thereby generating multiple charge carriers within the CQD layer. In CQD-based IRPDs with a 585 nm-thick CQD layer, we observed a positive temperature-dependent breakdown voltage behavior, suggesting the occurrence of kinetically pumped charge multiplication. Our multi-physics models support the hypothesis that the primary mechanism of current generation shifts from electron tunneling to impact ionization in CQD-based IRPDs when the CQD layer thickness exceeds 540 nm. Further evidence from density functional theory (DFT) calculations and operando photoluminescence (PL) measurements revealed that an increase in dDtoD, modulated by the ligand chain length, lowers the threshold energy required for charge multiplication. However, this increase in dDtoD simultaneously impedes electron hopping in CQD-based IRPDs. Consequently, we engineered a charge-multipliable CQD-based IRPD that exhibits a maximum gain of 85, a specific detectivity of 1.4×1014 Jones, and a bandwidth of 1.1×106 Hz at a wavelength of 940 nm, outperforming the emerging solution-processable IRPDs [1].
