Publication date: 15th December 2025
Halide perovskite memristors have been reported to exhibit a wide variety of switching mechanisms depending on material composition, device architecture, and interfacial design, leading to diverse physical interpretations and device behaviors, while comprehensive material–device design rules and physically grounded modeling frameworks remain limited.1
Here, we present a combined experimental and modeling study of low-voltage resistive switching in lead-free bismuth halide perovskite memristors, establishing a quantitative link between microscopic ion dynamics and macroscopic hysteresis behavior. Ag/Cs₃Bi₂I₉₋ₓBrₓ/ITO devices with I-rich (x = 3) and Br-rich (x = 6) compositions crystallize in a layered trigonal structure and form highly uniform thin films. Both devices exhibit reproducible bipolar switching with SET/RESET voltages below 0.3 V, ON/OFF ratios >10¹, and excellent cycling and retention stability.
Crucially, this work provides the first direct experimental validation of the conductance-activated quasi-linear memristor (CALM) framework in bismuth-based halide perovskite systems,2,3 showing quantitative agreement between measured and simulated I–V hysteresis across multiple scan rates. Physical modeling reveals ion-migration-controlled filament dynamics, with I-rich devices forming more stable filaments due to reduced halide vacancy density, while Br-rich devices achieve ultralow-voltage operation at the expense of slightly broader switching distributions. These results demonstrate that compositional engineering in lead-free bismuth perovskites enables precise control over the trade-off between switching voltage and stability, further strengthened by dynamic physical modeling, positioning this materials platform for energy-efficient non-volatile memory and neuromorphic hardware.
This work was funded by the European Research Council (ERC) via Horizon Europe Advanced Grant, grant agreement nº 101097688 (“PeroSpiker”)
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