Publication date: 15th December 2025
High-resolution, large-area infrared imaging holds significant promise for applications such as autonomous driving, medical imaging, and machine vision. However, its development is constrained by the complex fabrication processes and high costs associated with conventional technologies. While upconversion devices offer a methodology for direct infrared imaging, their performance has been limited by inefficient carrier transport between the infrared detection and light-emitting layers. In this study, we innovatively integrated infrared lead sulfide quantum dots with a perovskite emitting layer to construct an efficient upconversion imaging device. Through energy-level engineering, the perovskite quantum well was well-aligned with the infrared quantum dots, enabling effective carrier transfer and significantly enhancing hole transport efficiency. This resulted in an infrared-to-visible photon conversion efficiency of 10.6% and a high spatial resolution of 11 μm. Using a solution-phase ligand exchange process, we successfully fabricated a uniform large-area device measuring 3 × 3 cm, with an equivalent pixel count exceeding 7 million. This performance is three times higher than the best previously reported for solution-processed infrared upconversion devices. This work opens new pathways for the development of low-cost, high-performance infrared imaging technologies.
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