Publication date: 15th December 2025
The development of self-powered UV photodetectors is hindered by the lack of materials that simultaneously offer full-spectrum UV absorption and low-voltage operation. In this work, we demonstrate a self-powered UV photodetector based on Bi-doped Cs2AgInCl6, a lead-free halide double perovskite. Bi3+ doping extends the absorption edge from 340 nm to 410 nm and introduces a sharp absorption peak near 368 nm, attributed to Bi-induced s–p electronic transitions, enabling broad and efficient UV detection (250 – 410 nm). Beyond spectral tuning, Bi doping significantly improves carrier transport properties, enhancing mobility, extending carrier lifetime, and passivating defects observed from the SCLC and time-resolved spectroscopy measurements. The fabricated device operates effectively without external bias, exhibiting an ultrahigh open-circuit voltage of ~0.66 V under 40 mW/cm² illumination. These improvements result in substantial increases in photocurrent and reduced dark current, leading to improved responsivity (0.31 A/W) and detectivity (4.4×1013 Jones). Furthermore, the Bi-doped Cs2AgInCl6 shifts the valence-band maximum (VBM) to a lower value, reducing the VBM offset between the perovskite and the CuI (HTL) and thereby reducing charge accumulation at the interface, resulting in higher photocurrent and suppressed leakage current. Power-dependent photocurrent measurements of the device demonstrate near-unity behaviour (exponent value of 0.97, compared to 0.84 for pristine) upon Bi-doping, indicating efficient collection of photogenerated carriers and supporting the improved interface between the active material and CuI. Furthermore, long-term ambient testing over three months shows only minor performance degradation, confirming excellent environmental stability. These findings establish Bi-doped Cs2AgInCl6 as a promising, eco-friendly material for next-generation self-powered UV photodetectors.
C.B. acknowledges PMRF India for financial support
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