Publication date: 15th December 2025
III–V group colloidal quantum dots (CQDs) are highly promising semiconductors for short-wavelength infrared (SWIR) optoelectronics due to their narrow bulk band gaps, size-tunable properties, and heavy-metal-free composition. Among these, InAs CQDs are particularly compelling for SWIR applications. However, their performance are limited by unbalanced stoichiometry and complex surface chemistry, which complicate effective surface passivation—even when using widely adopted InBr₃-based solution-phase ligand exchange (SPLE) strategies. As a result, InAs CQDs typically underperform compared to Pb chalcogenide CQDs.
In this work, we introduce a novel ligand system based on AlBr₃ and methylammonium acetate for the SPLE of InAs CQDs with an excitonic absorption peak near 1200 nm. This new approach reduces steric hindrance and enhances ligand binding, significantly improving surface passivation compared to InBr₃-treated CQDs. This is evidenced by enhanced photoluminescence and increased surface ligand density.
Field-effect transistors fabricated from these CQD inks demonstrate improved carrier transport, achieving mobilities of 0.26 cm² V⁻¹ s⁻¹ and on–off ratios exceeding 10⁵. Additionally, the CQD films exhibit thermal stability up to 200 °C, making them suitable for demanding applications such as LiDAR systems and automotive cameras.
We gratefully acknowledge T. Zaharia and A. Kamp for technical support.
This work is funded by technical (ERC-AdvancedGrant, DEOM, 101055097). Views and opinions expressed are however those of the author(s) only and do not necessarily reflect those of the European Union or the European Research Council. Neither the European Union nor the granting authority can be held responsible for them.
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