Shell-Engineered ZnSeTe Quantum Dots Enabling High-Performance and Stable Blue QLEDs
Seongwoo Cho a b, Hyeonseung Ban c, Sung Nam Lim a, Jeong Cheol Seo a, Shin Ae Song a, Sohee Jeong b, Seong Yong Cho c, Ju Young Woo a
a Autonomous Manufacturing & Process R&D Department, Korea Institute of Industrial Technology (KITECH), Ansan 15588, Republic of Korea
b Department of Energy Science (DOES), Center for Artificial Atoms, Institute of Energy Science and Technology (SIEST), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
c Department of Photonics and Nanoelectronics, College of Science and Convergence Technology, Hanyang University, Ansan 15588 , Republic of Korea
Proceedings of MATSUS Spring 2026 Conference (MATSUSSpring26)
D1 Colloidal QDs in visible optoelectronics: focusing on non III-V nanocrystals
Barcelona, Spain, 2026 March 23rd - 27th
Organizers: Se-Woong Baek, Jiwan Kim and Soong Ju Oh
Poster, Seongwoo Cho, 859
Publication date: 15th December 2025

Quantum dots (QDs) have emerged as key emissive materials for next-generation display technologies owing to their size-tunable band gaps, high color purity, and compatibility with scalable solution-processing techniques. While red and green indium phosphide–based quantum dot light-emitting diodes (QLEDs) have recently achieved remarkable external quantum efficiencies (EQEs) and operational lifetimes, the realization of efficient and stable blue-emitting QLEDs remains a critical challenge.1-2 This limitation is primarily associated with intrinsic material instability and inefficient charge carrier dynamics in wide-bandgap emissive layers.

ZnSeTe-based quantum dots have attracted increasing attention as promising blue emitters due to their favorable electronic structure and optical properties.3 Despite recent progress in achieving high EQEs, ZnSeTe-based QLEDs still suffer from insufficient operational stability, hindering their practical implementation in fully electroluminescent devices.4 Addressing this issue requires precise control over both the nanocrystal structure and the charge recombination environment within the emissive layer.

Herein, we report a shell-engineering strategy for ZnSeTe quantum dots aimed at improving device performance and operational stability. By systematically modulating shell thickness during synthesis, we obtained ZnSeTe QDs with controlled size distributions, which were subsequently incorporated into the emission layer. This size-engineered emissive architecture enables more balanced charge injection and optimized carrier recombination dynamics, thereby mitigating charge carrier imbalance in blue-emitting QLEDs.

As a result, QLEDs based on the shell-engineered ZnSeTe QDs exhibit simultaneously enhanced brightness, improved external quantum efficiency, and prolonged operational lifetime compared to reference devices. These results highlight the critical role of shell thickness control in tailoring charge carrier dynamics in blue-emitting QD systems. Our findings demonstrate that ZnSeTe quantum dots, when combined with rational shell engineering, represent a viable material platform for the development of reliable, high-performance blue QLEDs, contributing to the advancement of next-generation fully electroluminescent display technologies.

This study was supported by grants funded by the Ministry of Trade, Industry, and Resorces (RS-2022-00144108, RS-2024-00423271, and RS-2025-02315917) of the Korean Government. 

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