Publication date: 15th December 2025
Alpha (α) phase halide perovskite thin films have been extensively applied as active layers in optoelectronic devices due to their unique photophysical properties. Moreover, halide perovskites can also exist in a less photoactive but more stable delta (δ) phase in ambient. Despite its limitations, the promises of the δ phase perovskite in enhancing device performance and stability have been recently highlighted, provoking the need for a deeper understanding of its properties. In this work, we explore the effects of the photophysical and structural properties of δ phase triple-cation mixed-halide perovskite (Cs0.05FA0.81MA0.14)Pb(I0.85Br0.15)3 (δ-PVK) on the performance of ZnO-based ultraviolet (UV) photodetector by modifying the ZnO active layer surface with a thin layer of δ PVK via spin-coating. This strategy yields a ZnO/δ-PVK bilayer-based UV photodetector with improved performance due to the enhanced inter-layer charge transfer form δ-PVK to ZnO. The ZnO/δ-PVK bilayer device yields a photocurrent (Iph) ca. 3 times greater than that of the ZnO single layer device and ca. 2 orders of magnitude greater than that of the ZnO/αPVK bilayer device. In the same vein, the ZnO/δ-PVK bilayer device shows the highest; on-to-off current (Ion/Ioff) ratio (105.5), photoresponsivity (R, 3.17 A/W), photodetectivity (D, 2.2 × 1011 Jones) and photoconductive gain (G, 10.1) under 391nm UV light irradiation and 21.42 mW/cm2 light intensity at 1V bias. This work advances the usefulness of the δ phase perovskite hitherto disregarded in optoelectronic device fabrication.
We acknowledge the support from Engineering and Physical Sciences Research Council (EPSRC) within the United Kingdom Research and Innovation (UKRI). Grant reference: EP/Z002907/1.
