Dynamic Band-Gap Control in Perovskite-Inspired Materials via Polar Electron-Phonon Coupling
Claudio Cazorla a
a Department of Chemical Engineering and Barcelona Research Center in Multiscale Science and Engineering, Universitat Politècnica de Catalunya, Eduard Maristany 16, EEBE, Barcelona 08019, Spain
Proceedings of MATSUS Spring 2026 Conference (MATSUSSpring26)
A4 Emerging Hybrid and Inorganic Solar Absorbers: Beyond ABX3
Barcelona, Spain, 2026 March 23rd - 27th
Organizers: Nakita Noel, Jay Patel and Marcello Righetto
Invited Speaker, Claudio Cazorla, presentation 877
Publication date: 15th December 2025

The ability to dynamically control the electronic band gap in semiconductors is essential for next-generation optoelectronic technologies, ranging from adaptive photodetectors to reconfigurable photovoltaics. However, conventional approaches based on temperature or strain provide only slow or limited tunability. In this talk, I will present a promising strategy for achieving fast, reversible band-gap modulation in anharmonic pervoskite-inspired materials by exciting low-energy polar phonon modes that are strongly coupled to electronic states. Using a combination of ab initio calculations, anharmonic Fröhlich theory, and machine-learning techniques, we engineer polar electron–phonon coupling to tune band-gap renormalization under experimentally accessible electric fields on the order of 1 kV/cm [1]. Our strategy is explicitly applied to highly anharmonic anti-perovskite compounds, which already display a broad range of band-gap and light-absorption₋ spectra as a function of composition [2]. This framework offers an appealing alternative to static chemical or structural modifications, enabling non-thermal, ultrafast, and spatially resolved control of band structures with implications for light-responsive devices, adaptive solar absorbers, and quantum optoelectronic platforms. Overall, this work establishes a general strategy for exploiting anharmonic lattice dynamics in perovskite-inspired materials to achieve on-demand control of electronic properties, bringing the prospect of dynamically reconfigurable semiconductor functionality closer to reality.

C.C. acknowledges support by MICIN/AEI/10.13039/501100011033 under the grants PID2023-146623NB-I00 and PID2023-147469NB-C21 and by the Generalitat de Catalunya under the grants 2021SGR-00343, 2021SGR-01519 and 2021SGR-01411. Computational support was provided by the Red Española de Supercomputación under the grants FI-2025-1-0015, FI-2025-2-0006, FI-2025-2-0028 and FI-2025-3-0004. This work is part of the Maria de Maeztu Units of Excellence Programme  CEX2023-001300-M funded by MCIN/AEI (10.13039/501100011033).

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