Publication date: 15th December 2025
In this work, we present an advance space charge limited current (A-SCLC) model, a powerful tool for comprehensive analysis of charge carrier dynamics in semiconductors. The capabilities of this model are demonstrated on two carbon/perovskite/carbon devices based on methylammonium lead bromide (MAPbBr3) and methylammonium lead iodide (MAPbI3) single crystals. Using the A-SCLC, one can extract key parameters such as microscopic mobility and concentrations of free and trapped charge carriers, trap position, and position of thermodynamic Fermi level, through voltage- and energy-dependent analysis. The main advantage of A-SCLC model is its ability to map charge carrier concentrations and trap states within the semiconductor bandgap, thus offering insights into the energetic distribution and transport processes.
Our investigation reveals that both materials exhibit an increase in microscopic mobility and free charge carrier concentration after illumination. Moreover, we report a Fermi level shift after illumination, 46 meV in MAPbBr3- and 6 meV in MAPbI3-based device. Modeled curves point to two different transport dynamics. While C/MAPbBr3/C device shows clear charge injection mechanism (i.e. an increase in trapped and free charge carriers) in forward bias mode, the C/MAPbI3/C device exhibits the presence of injection barrier that alters the shape of the measured and modeled curves.
Overall, the A-SCLC model provides a unique interpretation of SCLC that offers deep insights into charge carrier dynamics with wide applicability beyond halide perovskite materials. Thus, this work contributes not only to a fundamental understanding of the processes in halide perovskite materials but also to the ongoing development of comprehensive characterization tools in the field of light-sensitive technologies.
This work is funded by Grant Agency of the Czech Republic through project No. 26-23776S and by Brno University of Technology through project VUT EXCELENCE.
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