Publication date: 15th December 2025
All-inorganic cesium lead iodide (CsPbI₃) nanocrystals (NCs) have emerged as promising emitters for high-performance light-emitting diodes (LEDs) due to their narrow emission bandwidth, high color purity, and tunable bandgap. However, their practical application is hindered by surface defects, iodide vacancies, and structural instability, which lead to non-radiative recombination and degraded device performance.
In this work, we report an effective surface passivation strategy using alkylphosphonium iodide to enhance the optical and electronic properties of CsPbI₃ nanocrystals and improve their LED performance. The alkylphosphonium iodide molecules simultaneously supply iodide ions to compensate halide vacancies and introduce bulky organic cations that passivate surface trap states and suppress ion migration. As a result, the treated CsPbI₃ NCs exhibit significantly enhanced photoluminescence quantum yield, prolonged carrier lifetime, and improved colloidal and phase stability compared to untreated counterparts. Structural and spectroscopic analyses confirm reduced defect density and improved surface chemistry after passivation. LEDs fabricated with the passivated CsPbI₃ NCs demonstrate enhanced luminance, lower turn-on voltage, and substantially improved external quantum efficiency, along with better operational stability.
This work highlights alkylphosphonium iodide passivation as a simple yet effective strategy to address surface defects in CsPbI₃ nanocrystals, providing valuable insights for the development of stable and efficient perovskite nanocrystal-based optoelectronic devices.
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