Publication date: 15th December 2025
Short-wave infrared (SWIR, 1000–2000 nm) light is highly attractive for applications in optical communications, biological imaging, and sensing [1]. Colloidal InAs quantum dots (QDs) have emerged as a promising, RoHS-compliant material for SWIR applications, offering tunable optical properties and demonstrating significant advances in material synthesis and device integration [2]. Despite these advances, achieving high efficiency, strong radiance, and long-wavelength emission remains challenging, motivating further optimization of both materials and device architecture.
Previous InAs QD light-emitting diodes (LEDs) have demonstrated promising SWIR emission [3], representing an important step toward high-performance devices; however, efficiency, radiance, and emission at extended wavelengths have remained limited. Here, we show that optimizing InAs@ZnSe core-shell QDs in tailored LED architectures enables devices that simultaneously achieve high efficiency, high radiance, and emission at 1550 nm.
This performance was realized by systematically tuning the electron and hole transport layers to improve energy level alignment, carrier injection, and recombination balance within the emissive layer. Adjusting transport layer materials and thicknesses enhanced charge transport, reduced leakage currents, and promoted efficient radiative recombination.
The resulting LEDs exhibit an external quantum efficiency (EQE) exceeding 2% and a maximum radiance above 5 W*sr-1*m-2, demonstrating that InAs@ZnSe QDs, combined with optimized device architecture, provide a powerful platform for high-performance SWIR emission.
