Strain-Induced Electronic Charge Redistribution in Graphene on Patterned hBN
Solange Di Napoli a b, Dawei Zhai c, Myriam Aguirre d e f, Nancy Sandler g, M. Andrea Barral a b
a Instituto de Nanociencia y Nanotecnología (CNEA - CONICET), Av. Gral. Paz 1499, Provincia de Buenos Aires, Argentina
b Departamento de Física de la Materia Condensada, GIyA-CNEA, Av. Gral. Paz 1499, Provincia de Buenos Aires, Argentina
c Department of Physics, The University of Hong Kong, Hong Kong, China; HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
d Instituto de Nanociencia y Materiales de Aragón, Campus Rı́o Ebro, Edif. I+D, C/ Mariano Esquillor Gómez s/n, Zaragoza, Spain
e Laboratorio de Microscopı́as Avanzadas, Universidad de Zaragoza Mariano Esquillor s/n, 50018, Zaragoza, Spain
f Departamento de Física de la Materia Condensada, Universidad de Zaragoza, C/ Pedro Cerbuna 12, 50009, Zaragoza, Spain
g Physics and Astronomy Department and Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701-2979, United States
Proceedings of MATSUS Spring 2026 Conference (MATSUSSpring26)
D5 2D Layered Materials for Sustainable Energy Conversion and Storage
Barcelona, Spain, 2026 March 23rd - 27th
Organizers: Teresa Gatti, Paolo Giusto and Oleksandr Savatieiev
Poster, M. Andrea Barral, 967
Publication date: 15th December 2025

Mechanical deformations provide a powerful route to engineer the electronic properties of graphene. Strain modifies the nearest-neighbor hopping parameters, an effect that can be described in tight-binding and continuum Dirac-like models by effective pseudo-gauge fields. When these gauge fields are spatially inhomogeneous, they generate effective magnetic pseudo-fields that strongly redistribute charge across the membrane and significantly alter its electronic structure [1,2].

Understanding deformed graphene is therefore essential for potential device applications, whether leveraging its intrinsic properties or employing it as an active layer or substrate in more complex structures. In this work, we investigate the relationship between the geometrical profile of a graphene membrane and its electronic properties.

To approximate realistic experimental conditions, we modeled a graphene sheet deposited on a hexagonal boron nitride (hBN) substrate patterned with an engraved periodic profile, as produced by thermal scanning probe lithography (TSPL) [3]. Using  first-principles calculations based on density functional theory,  we first studied a finite square graphene flake with zigzag edges containing 160 carbon atoms placed on a 10x10 hBN supercell exhibiting  a two-dimensional periodic deformation. After structural relaxation, the graphene layer retained a smooth corrugated profile, highlighting the dominant role  of van der Waals interactions in conforming the membrane to the patterned substrate.  

We then performed calculations for a relaxed 10×10 supercell of graphene on deformed hBN to determine the electronic properties of the periodic structure. Our results show the opening of a band gap at the original Dirac points, consistent with sublattice-symmetry-breaking induced by the alignment between the two lattices. In the aligned configuration,  one carbon atom sits above a boron atom while the other sits above a nitrogen atom, lifting the degeneracy between the two sublattices. 

Furthermore, we observe the emergence of isolated bands associated with additional gaps at both higher and lower energies. Near the neutrality point, the bands exhibit a renormalization of the Fermi velocity, indicating an incipient strain-induced band narrowing. Finally, calculations of the local density of states (LDOS) reveal the development of spatially varying sublattice polarization across the membrane, a clear signature of out-of-plane deformation and strain-induced local symmetry breaking. 

 

We acknowledge the financial support of European Commission through Marie Skłodowska-Curie Actions H2020 RISE with the project  ULTIMATE-I (Grant No. 101007825).
Nancy Sandler gratefully acknowledges financial support for this research by the Fulbright U.S. Scholar Program, which is sponsored by the U.S. Department of State and Argentina-America Fulbright Comission. Its contents are solely the responsibility of the author and do not necessarily represent the official views of the Fulbright Program, the Government of the United States, or the Argentina-America Fulbright Comission.

© FUNDACIO DE LA COMUNITAT VALENCIANA SCITO
We use our own and third party cookies for analysing and measuring usage of our website to improve our services. If you continue browsing, we consider accepting its use. You can check our Cookies Policy in which you will also find how to configure your web browser for the use of cookies. More info