Proceedings of September Meeting 2016 (NFM16)
Publication date: 14th June 2016
Ferroelectric materials exhibit bulk photovoltaic effects due to their asymmetric polar crystal structure,characterized with large and switchable photovoltage with magnitude not limited by an energy bandgap. For ferroelectric thin films, while usually the photovoltage magnitude is limited by the small thickness, large photovoltage is obtained by implementing in-plane polarization configuration to break the thickness constraint. Existence of significant bulk photovoltaic effect as a tensor parameter in ferroelectric thin films,in addition to interfacial energy barriers and depolarization field effects, is verified when substantial photovoltaic responsesare observed in the plane perpendicular to the polarization direction by usingsymmetric in-plane electrodes to eliminate the direct contributionsfrom the depolarization field and the interfacial energy barriers. After presenting these photovoltaic properties in ferroelectric thin films as we studied previously, this talk will also introduce our efforts in device applications by combining the photovoltaic effect with other functions in ferroelectric thin films, including our ultraviolet (UV) sensors and dosimeters. An energy autonomous UV sensing mechanism by sensing and harnessing photon energy simultaneously with ferroelectric thin filmsis implemented to create battery-less and wire-less UV sensors. The mechanism involves accumulating and storing the photovoltaic charge through the photovoltaic and dielectric properties of ferroelectric thin films, respectively, and transferring the stored charge to a radio frequency transmitter. The time-interval between the radio frequency pulses generated by the transmitter is inversely proportional to the photo-intensity. The sustainability of the operation is ascribed to the characteristics of photovoltaics in ferroelectric thin films instead of semiconductors.
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