Higher Bandgap Hybrid Perovskites for Tandem Photovoltaics
Ivan Scheblykin a, Aboma Merdasa a, David Sörell a, Eva Unger a b, Steve Albrecht b, Lukas Kegelmann b, Lars Korte b, Bernd Rech b
a Lund University, Sweden, Kämnärsvägen 10H, Lund, 22645, Sweden
Materials for Sustainable Development Conference (MATSUS)
Proceedings of September Meeting 2016 (NFM16)
Berlin, Germany, 2016 September 5th - 13th
Organizers: Marin Alexe, Enrique Cánovas, Celso de Mello Donega, Ivan Infante, Thomas Kirchartz, Maksym Kovalenko, Federico Rosei, Lukas Schmidt-Mende, Laurens Siebbeles, Peter Strasser, Teodor K Todorov, Roel van de Krol and Ulrike Woggon
Invited Speaker, Eva Unger, presentation 427
Publication date: 14th June 2016

Hybrid organic-inorganic perovskites are likely to be of great importance in the development of hybrid tandem photovoltaics device technology.[1] The optimum bandgap for monolithically integrated HOIP/Si tandem solar cells is at 1.73 eV for the perovskite absorber,[2] which can be achieved by e.g. halide substitution in MAPb(BrxI1-x)3 with an approximate composition of x = 0.2.[3] However, mixed anion higher bandgap HOIPs have been shown to exhibit photoinstability resulting in phase segregation caused by an ion redistribution processes induced by light.[4] 

We found that heat and light have apparently opposing effects on the mixed MAPb(BrxI1-x)3 perovskites with heat inducing a homogenization of the halide distribution while light can induce in-homogenization due to bromide and iodide migrating and forming domains in the samples. Using photoluminescence microscopy, we investigate the dynamics of halide diffusion and spatial distribution of bromide- and iodide-rich domains within the material. We find that photo-induced ion migration in mixed halide HOIPs is phenomenologically related to photo-induced photoluminescence enhancement discussed elsewhere [5] and correlates with the intrinsic disorder in the material. 

Photochemical instabilities in the HOIP absorber causing the formation of lower energy states, limit the quasi-Fermi level splitting and hence define the maximum open circuit voltage. The intrinsic defect state density and non-radiative recombination is another parameter translating into performance losses in the absorber. On the device level, architecture as well as absorber layer coverage and selective contacts determine the overall performance.

To navigate all possible obstacles in the demanding task of optimizing hybrid tandem HOIP devices for tandem applications, we need to distinguish between the different possible limiting factor and hopefully overcome some of them by either engineering better materials or device architectures. 

[1] Bailie et al., En. Env. Sci., 2015, 8, 956.

[2] Albrecht et al., J. Opt. 2016, 18, 064012

[3] Noh et al., Nano Lett. 2013, 13, 1764

[4] Hoke et al., Chem Sci. 2015, 6, 613

[5] Tian et al., Phys. Chem. Chem. Phys. 2015, 17, 24978



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