Proceedings of September Meeting 2016 (NFM16)
Publication date: 14th June 2016
Lead sulfide quantum dots (PbS QDs) have been the topic of intense study for over a decade due to their excellent optoelectronic properties and their large versatility in such applications as infrared sensors, infrared photon sources, transistors, and solar cells. Their versatility stems mainly from the size dependent bandgap and the wide array of possible ligands and surface modifications which allow low cost device processing from solution and facile modification of the electronic properties. PbS QD solar cells in particular have seen a rapid rise in solar cell performance, from less than 1% in 2005 to 10.6% in 2015.
PbS QD solar cells are characterized by large short circuit current (JSC) and limited short circuit voltage (VOC). Understanding the origin of the limited VOC is a necessary step towards the improvement of the power conversion efficiency of these class of solar cells. In this presentation I will report the temperature dependent behavior of highly efficient solar cells comprising a layer of tetrabutylammoniumiodide (TBAI) capped PbS and a layer of ethane dithiol (EDT) capped PbS. We observe a large increase in device performance at lower temperatures, mainly due to an increased VOC and fill factor (FF) with only slightly decreasing JSC. We explain the origin of this behavior by measuring important electronic properties of PbS films such as carrier mobility, permittivity, and doping concentration as a function of temperature. Finally, we provide guidelines to further improve PbSQD solar cell performance in the near future.
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