Synthesis and Characterization of the Intermediate Band Semiconductor V-doped β-In2S3 Thin Films
Marcos Pita a, Cristina Tapia a, Sebastian Fiechter b
Materials for Sustainable Development Conference (MATSUS)
Proceedings of September Meeting 2016 (NFM16)
Berlin, Germany, 2016 September 5th - 13th
Organizers: Marin Alexe, Enrique Cánovas, Celso de Mello Donega, Ivan Infante, Thomas Kirchartz, Maksym Kovalenko, Federico Rosei, Lukas Schmidt-Mende, Laurens Siebbeles, Peter Strasser, Teodor K Todorov, Roel van de Krol and Ulrike Woggon
Poster, Cristina Tapia, 147
Publication date: 14th June 2016

Intermediate band semiconductors have raised interest as materials to enhance photovoltaics’ efficiency and promote photocatalytic activity driven visible light. In this work we present a study on the doping of In2S3 with Vanadium[1] synthesized by Ion Layer Gas Reaction (ILGAR) technique[2] using 4 different V concentrations. The resulting materials have been characterized by X-Ray diffraction, UV-Vis absorption spectroscopy, scanning electron microscopy and X-Ray photoemission spectroscopy. These techniques yielded no significant differences between the non-doped and V-doped β-In2S3 thin films. Therefore, we performed Time Resolved Microwave Conductivity (TRMC) measurements that showed a decrease of carrier lifetime and diffusion length; these results suggest the presence of an intermediate band that increases the recombination and trapping of the charge carriers in V-doped β-In2S3 layers. A different mechanism for charge separation has been observed by Surface Photovoltage Spectroscopy (SPV) for V-doped β-In2S3 layers, indicating the presence of an intermediate band. Photocurrent and photoluminescence have shown that the presence of V enhance both parameters compared to non-doped In2S3; capacitance-voltage measurements show a shift on the flat band potential for the V-doped samples that may be consequence of a change in the energy values of both the valence and conduction bands. The results of Incident Photon to Current Conversion Efficiency (IPCE) measurements suggest the formation of an intermediate band that creates a photon-to-photon effect. 

 

[1] V-substituted In2S3: an intermediate band material with photocatalytic activity in the whole visible light range. R. Lucena, J. C. Conesa, I. Aguilera, P. Palacios and P. Wahnón.J. Mater. Chem. A, 2014, 2, 8236. DOI: 10.1039/C4TA00513A.

[2] A novel deposition technique for compound semiconductors on highly porous substrates: ILGAR. J. Möller, Ch.-H. Fischer, , H.-J. Muffler, R. Könenkamp, I. Kaiser, C. Kelch, M.C. Lux-Steiner.  Thin Solid Films, 2000, 361, 113. DOI: 10.1016/S0040-6090(99)00797-X.5362.

 



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