Gradient-doped bulky crystalline BiVO4 for water splitting
Meirong Huang a, Hongwei Zhu a
a Tsinghua University, Yifu Building Room 2422, Tsinghua University,Haidian District, Beijing, 100084, China
Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe September Meeting 2017 (NFM17)
SE3: 2D Nanomaterials Synthesis and Applications
Barcelona, Spain, 2017 September 4th - 9th
Organizers: Hermenegildo García and Ana Primo
Oral, Meirong Huang, presentation 010
Publication date: 20th June 2016

Photoelectrochemical (PEC) water splitting provides an attractive way to convert sunlight into chemical fuels from water. However, the development of efficient and stable photoanodes for oxygen evolution reactions (OERs) is still challenging because of the high activation energy and poor carriers separation. BiVO4 known for its deep valance band and excellent stability in near-neutral aqueous solutions is one of the most attractive photoanode candidates. Various strategies, including doping, and depositing CoPi, NiFeOx-Bi and Ni/Fe layered-double-hydroxide (LDH) for OER kinetics improvement and constructing p-n junctions for carriers recombination suppression, have been developed. As BiVO4 has a longer carrier lifetime (~40 ns) compared to other oxide photoanodes, preparation of bulky crystals and gradient doping in BiVO4 are efficient strategies to improve the carrier mobility and decrease the carriers recombination for further enhancing its photocatalytic performance. Bulky crystalline BiVO4 of less crystal defects (e.g., grain boundary) can decrease the carrier traps and recombination sites. Gradient-doped bulky crystalline BiVO4 will construct a built-in electric field with a distributing band bending to improve the mobility and separation of photogenerated carriers. In this work, first, electrodeposition of monoclinic BiOI on FTO substrate under an appropriate voltage is carried out, and solutions with different pHs are employed to introduce a distributing doping content. After the deposition of BiOI, the samples are annealed to obtain BiVO4. Next, a thin interfacial layer of SnO2 (~10 nm) between FTO and BiVO4 is introduced to prevent recombination at the FTO/BiVO4 interface. Finally, NiFeOx-Bi catalyst or Ni/Fe LDH is deposited on the surface of BiVO4 to optimize the overall catalytic performance.

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