Organic-Inorganic Perovskites: Unrivaled Versatility for Semiconductor Design and Fabrication
David Mitzi a
a Duke University, PO Box 90281, Durham, 27708, United States
Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe Fall Meeting19 (NFM19)
#PERFuDe19. Halide perovskites: when theory meets experiment from fundamentals to devices
Berlin, Germany, 2019 November 3rd - 8th
Organizers: Matthew Mayer, Roel van de Krol, Jörg Ackermann, Claudine Katan, Pablo P. Boix, Erwin Reisner, Wolfgang Tress, Uli Würfel and Simone Meloni
Keynote, David Mitzi, presentation 230
DOI: https://doi.org/10.29363/nanoge.nfm.2019.230
Publication date: 18th July 2019

Although known for more than a century, hybrid (organic-inorganic) halide-based perovskites have received extraordinary attention recently, because of the unique physical properties and chemical diversity of the three-dimensional (3-D) and related lower-dimensional (2-D, 1-D and 0-D) lead-, tin- and germanium-based systems, which make them outstanding candidates for application in photovoltaic and related optoelectronic devices. This talk will emphasize the structural versatility of the hybrid perovskite family [1] and resulting implications for semiconductor design, as well as film/device formation. Examples  include the use of specifically-designed organic cations to stabilize the formation of difficult-to-realize lead-free perovskite semiconductors [2], the incorporation of functional organic cations that directly impact charge carrier dynamics and photophysics [3], and the role that the organic cation plays in tailoring melting properties of hybrid perovskites [4] and how this may connect to developing a solvent-free film formation pathway and associated laminated device framework [5]. Outstanding functionality combined with facile processing, enabled by the chemical devirsity of the hybrid perovskites (in particular, the organic component of the structure), provide two pillars for generating unique physical properties and future application of this family of hybrid semiconductors.

The material discussed in this talk is primarily based upon work financially supported by the Office of Naval Research (ONR) through award number N00014-17-1-2207, the National Science Foundation (NSF) through award numbers DMR-1729297, DMR-1728921 and DMR-1729383, as well as the U. S. Department of Energy (DOE), as part of the Center for Hybrid Organic Inorganic Semiconductors for Energy (CHOISE), an Energy Frontier Research Center funded by the DOE, Office of Science, Basic Energy Sciences (BES).

© FUNDACIO DE LA COMUNITAT VALENCIANA SCITO
We use our own and third party cookies for analysing and measuring usage of our website to improve our services. If you continue browsing, we consider accepting its use. You can check our Cookies Policy in which you will also find how to configure your web browser for the use of cookies. More info