III-Nitride/Perovskite Nanocrystal Structures for Efficient Light Down-conversion via Förster Resonant Energy Transfer

Modestos Athanasiou^a, Paris Papagiorgis^a, Andreas Manoli^a, Caterina Bernasconi^b^,^c, Nicolas Poyiatzis^d, Pierre-Marie Coulon^e, Philip Shields^e, Maryna Bodnarchuk^b, Maksym Kovalenko^b^,^c, Tao Wang^d, Grigorios Itskos^a

^aExperimental Condensed Matter Physics Lab, Department of Physics, University of Cyprus, Cyprus

^bETH Zurich, Laboratory of Inorganic Chemistry, Department of Chemistry & Applied Biosciences, Vladimir-Prelog-Weg, 1, Zürich, Switzerland

^cEMPA - Swiss Federal Laboratories for Materials Science and Technology, Überland Strasse, 129, Dübendorf, Switzerland

^dDepartment of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom

^eDepartment of Electronic and Electrical Engineering, University of Bath, United Kingdom

Materials for Sustainable Development Conference (MATSUS)
Proceedings of nanoGe Fall Meeting19 (NFM19)

#CharDy19. Charge Carrier Dynamics

Berlin, Germany, 2019 November 3rd - 8th

Organizers: Marcus Scheele and Maksym Yarema

Poster, Modestos Athanasiou, 382
Publication date: 18th July 2019

Solid-state lighting is currently based on light down-conversion from blue emitting InGaN LEDs to yellow or green-red emitting phosphors. Such structures suffer from relatively poor light conversion efficiency, color purity and operational frequency limited by the phosphor emission characteristics. Lead halide perovskite nanocrystals (LHP NCs) offer the prospect of higher emission quantum yield with narrower PL linewidth and spectral tunability across the visible via facile ion exchange reactions, making them promising alternatives to phosphors for lighting applications.

Herein, we demonstrate efficient light down-conversion mediated by Förster Resonant Energy Transfer (FRET) in InGaN/GaN multiple quantum well (MQW) nanohole arrays, coated with green emitting CsPbBr₃ and FAPbBr₃ NC and red emitting FAPbI₃ NC overlayers. FRET is a near-field coupling process that is highly sensitive to the separation of the interacting excitons. Patterning the InGaN MQW into nanohole arrays allows a minimum nitride-NC separation while increasing the heterointerfacial area, thus improving simultaneously the non-radiative and radiative transfer efficiency. Detailed steady state and time-resolved photoluminescence (PL) studies indicate a significant reduction in the MQW PL decay time in the presence of the LHP NCs, accompanied by a significant concurrent increase of the integrated emission of the nanocrystals, providing evidence of efficient light down-conversion mediated by FRET with efficiencies as high as 80%.

Acknowledgements:

The work is financially supported by the Research and Innovation Foundation of Cyprus, under the "NEW STRATEGIC INFRASTRUCTURE UNITS-YOUNG SCIENTISTS" Program (Grant Agreement No. "INFRASTRUCTURES/1216/0004", Acronym "NANOSONICS") and the Engineering and Physical Sciences Research Council (EPSRC) EP.M015181/1, “Manufacturing Nano-GaN”. M. Athanasiou acknowledges financial support by the University of Cyprus via the "ADVANCED POSTDOCTORAL RESEARCH FELLOWSHIPS 2018-2019” Program

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