Proceedings of nanoGe Fall Meeting 2021 (NFM21)
DOI: https://doi.org/10.29363/nanoge.nfm.2021.199
Publication date: 23rd September 2021
The expanding market of optoelectronic devices is ever-growing, from LEDs and displays to photovoltaic devices and photodetectors. Conventional device manufacturing requires several physical and/or chemical thin film deposition techniques, which typically require high vacuum and high temperature processes. In addition, masking or photolithography are necessary to define the desired device geometry. In contrast to conventional device manufacturing technologies, innovative fabrication approaches have gained great attention. Technologies such as screen printing and inkjet printing (IJP), which have been used extensively in the graphics art industry, are being used to deposit functional materials. Semiconductor material inks like halide perovskites can be prepared to deposit a wide array of functional materials in the form of precursor inks or nanoparticle colloidal suspensions. IJP is a digital material deposition technology, which means that material can be deposited in any pattern with precision without need for masks. It also allows great control of process parameters and is ideal for fast prototyping while having the potential for scalability. Thus, mass scale and cost-effective production of electronic devices is made possible by leveraging the maturity of IJP. However, despite the great potential of IJP, most applications to functional material deposition have involved organic materials, which are known to be less stable than their inorganic counterparts.
Ub this contribution, IJP is used for the fabrication of halide perovskite layers with and without lead and we also present the architecture of fully inorganic functional devices. The printing and characterization of halide perovskites is presented first, and that of transport layers is presented later. Characterization, including XRD, SEM, and profilometry and optical analysis will proceed layer. Afterwards, the fabrication and device characterization of a heterojunction diode and a full device with perovskite is introduced. Its dark I-V characteristics are presented and compared to their counterpart under illumination.
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