Proceedings of nanoGe Fall Meeting 2021 (NFM21)
Publication date: 23rd September 2021
BiVO4 is one of the most promising photoanode candidates to achieve high efficiency photoelectrochemical water splitting1. However, its poor surface catalysis and extensive surface recombination hampers its water oxidation activity. Surface modifications such as cocatalysts or passivation overlayers are utilized to improve the water oxidation kinetics or to decrease the charge recombination at the surface of the photoanode, respectively2. However, for the passivation layers it is often non-trivial to identify the recombination or trapping channels which are hindered. Also, it is difficult to observe such processes using non-steady state measurements. Herein, using transient photocurrent (TPC) measurements with short white LED pulses we observed the photogenerated electron trapping process at the BiVO4 surface, which is related to surface states V5+/V4+. We also showed that TiO2 overlayer grown by atomic layer deposition (ALD) can be used to fine tune the extent of this process. We observed that the extent of the trapping process depends on the thickness of the TiO2 overlayer, and there is a trade-off with the passivation of the trapping process and the increased charge transfer resistance at the interface.
This work was supported by The Scientific and Technical Research Council of Turkey (TÜBİTAK) (Grant number: 114Z305).
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