Hybrid GaAs nanowire/perovskite heterostructures
Darivianaki Eleftheria a
a Department of Materials Science and Technology, University of Crete, Heraklion, 71003, Greece
Proceedings of nanoGe Fall Meeting 2021 (NFM21)
#PerEmer21. Perovskites III: Emerging Materials and Phenomena
Online, Spain, 2021 October 18th - 22nd
Organizers: Moritz Futscher, Jovana Milic and Aditya Mohite
Poster, Darivianaki Eleftheria, 292
Publication date: 23rd September 2021

Perovskite semiconductors attract much interest in photovoltaic applications nowadays, due to superior material properties they have, such as high absorption coefficient enabling the fabrication of highly-efficient perovskite solar cells, as well as bandgap tuning capability, rendering it a suitable semiconducting material for tandem photovoltaic applications. Additionally, low cost and ease of fabrication is required for the fabrication of perovskite solar cells[1]. Moreover, III-V nanowires, as for example GaAs nanowires also constitute a matter of active research due to their excellent optoelectronic properties, such as high mobility of carriers and optimum bandgap [2]. Due to their superior electronic properties, GaAs nanowires could be used as an Electron Transporting Layer (ETL) in perovskite solar cells, replacing conventional ETLs, like titanium dioxide (TiO2). Compared to TiO2, GaAs has significantly higher electron mobility value [2],[3]. Moreover, the energy levels of intrinsic GaAs favor band alignment of GaAs conduction band with the conduction band of CH3NH3PbI3 perovskite. Based on this favorable alignment, it is anticipated than an effective electron extraction can be achieved.

In this work, we seek to combine the optimal characteristics of these two classes of high-performance semiconductors and fabricate hybrid GaAs nanowire/perovskite solar cell devices. Furthermore, we aim to investigate the compatibility of the two materials in order to demonstrate tandem GaAs/perovskite solar cell structure.4 In this architecture, two solar cell structures are involved, a GaAs solar cell with bandgap energy of GaAs absorbing layer at 1.42eV and a top perovskite cell absorbing at ~1.8-1.9eV. We propose that GaAs nanowires (ETL) would facilitate efficient electron extraction that would lead to enhanced tandem solar cell performance.

This work was supported in part by the project “NANO-TANDEM” (MIS 5029191), co-financed by Greece and the European Regional Development Fund

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