Charge Reservoirs in an Expanded Halide Perovskite Analog: Enhancing High-Pressure Conductivity through Redox-Active Molecules
Roc Matheu a b, A. Breidenbach b, N. Wolf b, Y. Lee b, Z. Liu b, L. Leppert c, H.I Karunadasa b, K. Fe b, Y. Lin b
a Unversitat de Barcelona
b Stanford University, Stanford, CA 94305, United States
c University of Twente, P.O. Box 217, Enschede, 7500 AE, Netherlands
Materials for Sustainable Development Conference (MATSUS)
Proceedings of Materials for Sustainable Development Conference (MAT-SUS) (NFM22)
#NANOMAT - Advances on the Understanding and Synthesis of Nanomaterials for Photocatalysis and Optoelectronics
Barcelona, Spain, 2022 October 24th - 28th
Organizers: Ludmilla Steier and Daniel Congreve
Invited Speaker, Roc Matheu, presentation 356
DOI: https://doi.org/10.29363/nanoge.nfm.2022.356
Publication date: 11th July 2022

As halide perovskites and their derivatives are being developed for numerous optoelectronic applications, controlling their electronic doping remains a fundamental challenge. We have recently discovered a novel strategy of using redox-active organic molecules as stoichiometric electron acceptors in new expanded perovskite analogs. Compressing the metal-halide framework drives up the valence band relative to the acceptor orbitals of the organic molecules. Thus, the material’s electronic conductivity increases by a factor of 105 with pressure, reaching 50(17) S cm–1 at 60 GPa, exceeding the high-pressure conductivities of most halide perovskites. This conductivity enhancement is attributed to an increased hole density created by reduction of the redox-active molecules. This work elevates the role of organic cations in 3D metal-halides, from templating the structure to serving as charge reservoirs for tuning the carrier concentration.

 

Redox-active organic cations can act as charge reservoirs in the expanded perovskite analog (dmpz)[Sn2I6]. Material compression increases electronic conductivity by five orders of magnitude. This conductivity rise is attributed to an increased hole density in the valence band, caused by electron transfer to the redox-active molecules

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