From Room Temperature Field Effect Transistors to Tailoring Phase Purity, Crystallinity and Orientation in 2D Perovskites
Aditya Mohite a
a Rice University, US
nanoGe Perovskite Conferences
Proceedings of nanoGe International Conference on Perovskite Solar Cells, Photonics and Optoelectronics (NIPHO19)
International Conference on Perovskite Thin Film Photovoltaics
Jerusalem, Israel, 2019 February 24th - 27th
Organizers: Lioz Etgar and Kai Zhu
Invited Speaker, Aditya Mohite, presentation 044
Publication date: 21st November 2018

Halide (hybrid) perovskites (HaP) have emerged as a new class of semiconductors that truly encompass all the desired physical properties for building optoelectronic and quantum devices such as large tunable band-gaps, large absorption coefficients, long diffusion lengths, low effective mass, good mobility and long radiative lifetimes. As a result, proof-of-concept high efficiency optoelectronic devices such as photovoltaics and LEDs have been fabricated using both 3D and 2D perovskites. In this talk, I will describe two new results that are open questions and demand an investigation.

First, I will describe our results on demonstration of field effect transistors (FET) operational at room temperature, which despite the excellent electronic transport properties in halide perovskites has remained elusive. Briefly, we fabricated hybrid perovskite-based FETs that operate at room temperature with negligible hysteresis. Extensive current-voltage and quantitative device modeling reveals that the use of high-k dielectrics enables a strong modulation of the channel conductance with gate voltage exhibiting p-type transport characteristics. After gate bias poling, we succeed in achieving ambipolar FETs an on/off ratio >104 with no degradation in transport characteristics for >100 cycles. Our results elucidate the key principles for achieving gate modulated carrier transport in hybrid perovskite thin films.

Second, I will describe the design principles for tailoring achieving phase-purity, crystallinity and orientation in layered 2D perovskites and its implications on optoelectronic application. We will demonstrate proof-of-concept optoelectronic devices that validate our scientific findings.

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