Multi-Modal Approaches to Understand the Nature of Halide Perovskite Defects
Samuel Stranks a
a University of Cambridge - UK, The Old Schools, Trinity Ln, Cambridge CB2 1TN, UK, Cambridge, United Kingdom
nanoGe Perovskite Conferences
Proceedings of International Conference on Perovskite Thin Film Photovoltaics and Perovskite Photonics and Optoelectronics (NIPHO20)
Sevilla, Spain, 2020 February 23rd - 25th
Organizer: Hernán Míguez
Invited Speaker, Samuel Stranks, presentation 022
DOI: https://doi.org/10.29363/nanoge.nipho.2020.022
Publication date: 25th November 2019

Halide perovskites are generating enormous excitement for their use in high-performance yet inexpensive optoelectronic applications. Nevertheless, a number of fundamental questions about these materials still remain and need to be answered to push devices to their theoretical performance limits. For example, we still know very little about the specific nature of the defects leading to trap states, and the associated impact on carrier recombination and carrier diffusion.

I will present results on new techniques we are developing to address these open questions in halide perovskite semiconductors. These techniques focus on understanding charge carrier behavior, including recombination, trapping and diffusion, and how these properties link to chemical and material properties. I will present high-resolution luminescence microscopy techniques employing two-photon excitation to allow us to visualize and time-resolve carrier diffusion in three-dimensions, revealing anisotropic and depth-dependent carrier diffusion properties. Furthermore, we link the local luminescence properties to high-resolution crystallographic and chemical properties using synchrotron nano-probe X-Ray beamlines and low-dose scanning electron diffraction measurements. Through these measurements, we reveal the nature of the defects associated with local non-radiative power losses and heterogeneous diffusion. Furthermore, we provide guidelines about how we can ultimately eliminate these unwanted loss pathways and homogenize carrier diffusion.

© Fundació Scito
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