RF sputtered NiOx as hole transport layer for CH3NH3PbI3 perovskite solar cells
Masatoshi Yanagida a b, Namrta Pant b, Yasuhiro Shirai a, Kenjiro Miyano a
a Center for Green Research on Energy and Enviroment Materials, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan.
b Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-3-11 Takeda, Kofu, Yamanashi 400-8511, Japan
Poster, Masatoshi Yanagida, 086
Publication date: 25th November 2019

 

Radio-frequency (RF) sputtered NiOx has been investigated as as hole transport layer for the CH3NH3PbI3 perovskite (PVK) solar cells. 1-4 We prepared NiOx layer by using NiO as the sputtering target. The optical and surface property of NiOx films depends on the sputtering conditions such as Ar gas pressure, the sputtering power, and so on.2,3 The higher sputtering power negatively shift the maximum potential of valence band in NiOx. From XPS results, the amount of OH groups on the surface influences on the photovoltaic properties of PVK solar cells.2,3 Recently, we also showed the NiOx influenced on the film growth of PVK, especially for the growth of PbI2 crystal in PVK.4 We comprehensively report the stability test of PVK solar cells based on NiOx as hole transport layer.1

  

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