Low Temperature Synthetic Route to Bi2S3 Powders from Xanthate Precursors Using Melt Reaction for Photovoltaic Applications
Mousa Hossin a b, Abdulaziz Alanazi a d, Paul O'Brien a c, David Lewis a c
a School of Chemistry, the University of Manchester, Oxford Road, Manchester, UK
b Chemistry Department, Faculty of Science and Arts, Al-Baha University, Al Aqiq, Saudi Arabia
c School of Materials, the University of Manchester, Oxford Road, Manchester, UK
d School of Chemistry, Islamic University, Prince Naif Ibn Abdulaziz Rd, Madinah, Saudi Arabia
nanoGe Perovskite Conferences
Proceedings of International Conference on Perovskite Thin Film Photovoltaics and Perovskite Photonics and Optoelectronics (NIPHO20)
Sevilla, Spain, 2020 February 23rd - 25th
Organizer: Hernán Míguez
Poster, Mousa Hossin, 092
Publication date: 25th November 2019


Alkyl-xanthato bismuth(III) complexes of the form [Bi(S2COR)3] where R= Me (1), Et (2), nPr (3), iPr (4), nBu (5), sBu (6), iBu (7), Pent (8), iPent (9), nHex (10), nHept (11) and nOct (12) have been prepared and characterised by infrared spectroscopy (IR), nuclear magnetic resonance (1H and 13C) spectra and elemental analysis (EA).1 Thermogravimetric analysis (TGA) has been applied to study the decomposition temperature for each complex. Then all complexes were used as single-source precursors for the formation of bismuth sulfide (Bi2S3) nanocrystals (NCs) at low temperature of 175 °C using melt method.2 All synthesised metal sulfides from complexes (1) to (12) were characterised by powder X-ray diffraction (pXRD) and scanning electron microscopy (SEM). The powder X-ray diffraction patterns of Bi2S3 (NCs), which is indexed to orthorhombic lattice of bismuthinite revealed that, any change in the xanthate chain length can affect the growth along the (021) peak intensity, Figure 1.3 Despite the low temperature synthesis conditions, the Bi2S3 NCs exhibited good crystallinity in keeping with previous uses of metal xanthates complexes.


Figure 1: Powder XRD patterns of Bi2S3 NCs obtained [Bi(S2COR)3] where R= Me (1), Et (2), nPr (3), iPr (4), nBu (5), sBu (6), iBu (7), Pent (8), iPent (9), nHex (10), nHept (11) and nOct (12) precursors at 175 oC using melt method.

The author would like to acknowledge the Royal Embassy Saudi Arabia Culture Bureau London and Al-Baha University for financial support. A. Al-A. thankful to Ministry of Higher Education in Saudi Arabia for funding and the University of Islamic. M. H would also like to thank Prof Paul O'Brien for all his academic support during in his life and DJL who is funded by EPSRC (grant EP/R020590/1).

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