Combining transient photoluminescence and transient surface photovoltage: insights from drift-diffusion modeling
Orestis Karalis a, Hannes Hempel a, Vincent Le Corre b, Igal Levine c, Thomas Unold a
a Helmholtz-Zentrum Berlin für Materialien und Energie, 14109, Berlin, Germany.
b University of Southern Denmark, SDU CAPE
c Institute of Chemistry, The Hebrew University of Jerusalem, 9190401, Jerusalem, Israel
NIPHO25
Proceedings of International Conference on Perovskite Thin Film Photovoltaics and Perovskite Photonics and Optoelectronics (NIPHO25)
Cagliari, Italy, 2025 June 9th - 10th
Organizers: Giulia Grancini, Daniela Marongiu and Aldo Di Carlo
Oral, Orestis Karalis, presentation 017
Publication date: 24th April 2025

Time-resolved optoelectronic measurements, including time-resolved photoluminescence (trPL) and transient surface photovoltage (trSPV), have emerged as powerful tools for investigating charge-carrier dynamics in photovoltaic materials and especially in perovskite research [1]. While trPL has been extensively utilized to study recombination and quantify losses, its interpretation remains challenging, particularly for interlayer stacks [2]. Similarly, trSPV provides complementary insights by tracking the photoinduced dipole [3]  and has received notable attention within the perovskite community.

Levine et al. [1] demonstrated that combining these techniques effectively distinguishes between charge extraction and recombination at the buried interface of perovskite and the selective contact in a half-cell device configuration. This distinction is vital for optimizing perovskite solar cells, as interfacial losses are the primary factor limiting their power conversion efficiency. Although their results are promising, their model requires further refinement, and a deeper fundamental understanding is necessary to develop a more advanced analysis routine. Such a routine would identify interface-limiting factors, enabling differentiation between transport-related issues and defects.

In this work, we use drift-diffusion simulations to refine the analysis of both techniques, ensuring a more accurate characterization of charge transport and recombination processes in half-cell devices. The simulations are performed with SIMsalabim [4] and incorporate critical physical parameters, such as charge carrier mobility and energetic band bending, overcoming limitations in previous models. Our results demonstrate that laser repetition rates significantly influence carrier dynamics, impacting transient signal interpretation. Furthermore, we highlight discrepancies between previous kinetic models and our findings, offering an improved theoretical framework for correlating these transient measurements with solar cell performance metrics. This approach allows a rigorous analysis of interfacial losses and efficiency optimization in emerging photovoltaic technologies.

© FUNDACIO DE LA COMUNITAT VALENCIANA SCITO
We use our own and third party cookies for analysing and measuring usage of our website to improve our services. If you continue browsing, we consider accepting its use. You can check our Cookies Policy in which you will also find how to configure your web browser for the use of cookies. More info