Proceedings of International Conference on Perovskite Thin Film Photovoltaics and Perovskite Photonics and Optoelectronics (NIPHO25)
Publication date: 24th April 2025
One of the main components of p-i-n perovskite solar cells is the hole transport layer, for which self-assembled molecule called SAMs are used because due to its ability to create thin films on the nanometer scale, reducing losses that affect device performance. Different structures have been developed, among which those based on carboxylic acids have shown a good performance, this layer interacts with the ITO substrate through its anchor group to achieve a good performance of the device. In this work, we present a p-i-n device in which a new SAM was employed as a hole transport layer HTL deposited via spin coating. This molecule composed of triphenylamine and carboxylic acid has less hysteresis effect and high performance than the reference structure EADR03, with a high efficiency of 22.4% and fill factor of 82%. It is therefore capable of being considered as a reference for future photovoltaic devices due to its stability, high optical sensitivity and easy manufacturing.
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