Proceedings of International Conference on Perovskite Thin Film Photovoltaics and Perovskite Photonics and Optoelectronics (NIPHO26)
Publication date: 22nd April 2026
Self-powered photodetector and indoor photovoltaics have attracted significant attention for renewable energy generation, sensing, and advanced optoelectronic systems. Despite their exceptional optoelectronic performance, the high toxicity of lead and long-term ambient instability necessitates the development of alternatives to lead-halide perovskites (LHPs). Bismuth and antimony-based halide perovskite-inspired materials (PIMs) have attracted significant attention as environmentally friendly and stable replacements to LHPs. However, the optoelectronic performances of PIMs are still poor compared to LHPs, mainly due to their wider bandgap, reduced electronic dimensionality, larger carrier effective mass, strong self-trapped exciton formation and low mobility-lifetime product. In this study, we have synthesized an electronically 2D PIMs, Cs2AgBi2I9 (CABI), achieved via partial incorporation Ag+ at the A-site of highly stable Cs3Bi2I9 (CBI) lattice. The partial incorporation Ag+ results in narrower band gap of 1.78 eV, attributed to the orbital hybridization between Ag 5s and I 6p orbitals. A larger polaronic radius (34 Å) of CABI is estimated via density functional theory in comparison with CBI system (21 Å).1 Consequently, the 2D-CABI manifest outstanding carrier mobility-lifetime product (μτ) of 3.4 × 10−3 cm2 V−1, weaker electron-phonon coupling, longer hot-carrier lifetimes compared to other solution-processed Bi-PIMs.2[1] With those exceptional properties, Cs2AgBi2I9-based self-powered photodetector and indoor photovoltaic devices have been developed, delivering the highest responsivity of 0.219 mA/W under 19 μW/cm2 illumination and PCE of ≈8% under 1000 lux illumination, which are the highest among other PIMs [2]. Owing to the narrowed bandgap, the devices deliver broadband photodetection performance and operate effectively under diverse indoor lighting environments with color temperatures ranging from 2700 to 6500 K. This work opens a new avenue for exploring the potential of double A-site cation-based PIMs for designing next-generation optoelectronic technologies
I would like acknowledge CSIR-UGC for fellowship and IACS for research facilities. I would like to aknowdege my supervisor Dr. K. D. M. Rao for his continious support and research fecilities. I would like to aknowledge all my excellent collaborators and lab members.
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