Fully Printed IGZO memristors towards edge computation devices
Miguel Franco a b c, Senentxu Lanceros-Méndez a b d e, Rodrigo Martins c, Asal Kiazadeh c, Emanuel Carlos c
a Center of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal
b Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, 4710-057 Braga, Portugal
c CENIMAT|i3N, Department of Materials Science, School of Science and Technology, NOVA University Lisbon and CEMOP/UNINOVA, Caparica, Portugal
d BCMaterials, Basque Center for Materials, Applications and Nanostructures, UPV/EHU Science Park, 48940 Leioa, Spain
e IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Spain.
Proceedings of Neuromorphic Materials, Devices, Circuits and Systems (NeuMatDeCaS)
VALÈNCIA, Spain, 2023 January 23rd - 25th
Organizers: Rohit Abraham John, Irem Boybat, Jason Eshraghian and Simone Fabiano
Poster, Miguel Franco, 065
Publication date: 9th January 2023
ePoster: 

Solution-based memristors have solid technological potential based on their scalability, low cost, and environmentally friendlier processing. Inkjet printing is a digital technique that allows low-cost deposition of patterned thin films with a controlled thickness, which is a key factor for memristors development for highly uniform devices with low performance variations.

Indium gallium zinc oxide (IGZO), an oxide semiconductor material, shows promising resistive switching properties in its optimized stoichiometry.  An IGZO layer with a stoichiometry of 1:3:1 will optimize the generation of oxygen vacancies, responsible for carrier transportation.

In this work, a printed Indium tin oxide (ITO)/IGZO (1:3:1)/Silver (Ag) memristor has been fabricated showing both counter8wise (c8w) and 8wise (8w) switching at low operating voltage. The c8w switching is characterized by non-volatile characteristics with a SET and RESET voltage of 1 V and -0.75 V, respectively, and a retention up to 105 s, whereas the 8w switching shows volatile characteristics with a low threshold voltage (Vth < -0.65V). The current retention decay was further characterized by fitting an exponential function with a characteristic time (τ) of 3.38 ms. These volatile characteristics allowed them to be tested on different 2-bit pulse sequences, confirming the strong potential for temporal signal processing in the scope of reservoir computing.

Those combined characteristics allows to work well on printed metal oxide memristors using low-cost and sustainable materials by designing a fully memristive architecture solely based on IGZO, where the reservoir state (volatile mode) can be processed with the IGZO memristive readout neural network (non-volatile mode).

This research was funded by FEDER funds through the COMPETE 2020 Programme and National Funds through FCT—Portuguese Foundation for Science and Technology—under the scope of the project No. UIDB/50025/2020-2023. The authors thank the Fundação para a Ciência e Tecnologia (FCT) for financial support under the framework of Strategic Funding grants UID/FIS/04650/2020 and grant SFRH/BD/145741/2019. Financial support from the Basque Government Industry Department under the ELKARTEK program is acknowledged.

E. Carlos and A. Kiazadeh acknowledge the Individual Call to Scientific Employment Stimulus - 4th Edition (2021. 03825.CEECIND), (2021. 03386.CEECIND) through FCT. A. Kiazadeh and E. Carlos acknowledge FCT/MCTES, project NeurOxide (PTDC/NAN-MAT/30812/2017), 101097101 (Terrameta) and project Supreme-IT (EXPL/CTM-REF/0978/2021).

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