Quantized conductance signature in polymer based resistive switching devices for multilevel memory applications
Arti Bisht a, Ajeet Kumar a
a CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, Delhi 110012
b Academy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, India
Proceedings of Neuromorphic Materials, Devices, Circuits and Systems (NeuMatDeCaS)
VALÈNCIA, Spain, 2023 January 23rd - 25th
Organizers: Rohit Abraham John, Irem Boybat, Jason Eshraghian and Simone Fabiano
Poster, Arti Bisht, 067
Publication date: 9th January 2023
ePoster: 

Abstract: For ultra-high-density storage, multilevel resistive switching (RS) memories are an appealing technology. Despite existing studies of the switching behaviours of organic polymers, the switching mechanism of organic polymers is still not fully understood. This study investigated the switching mechanism of perylene diimide (PDI) based  resistive swiching device, demonstrating bipolar switching. Controlling stable quantized Conductance states is indispensable for the realisation of multilevel memory. Stable quantized conductance states have been demonstrated by imposing the compliance  current. Moreover, the device showed good endurance with >200 times HRS/LRS switching cycles and >105 second retention time. All these properties indicates that ITO/PDI/Al resistive switching device does have the potential to be used in multilevel memory storage applications.

Acknowledgement

Authors want to thank the Academy of Scientific and Innovative Research (AcSIR) for giving the opportunity and DST-INSPIRE for financial support.

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