Parallel volatile and non volatile memristive switching in mixed-halide perovskite synaptic transistors
Konstantinos Rogdakis a b, Emmanuel Kymakis a b
a Department of Electrical & Computer Engineering, Hellenic Mediterranean University (HMU), Heraklion 71410, Crete, Greece
b Institute of Emerging Technologies (i-EMERGE) of HMU Research Center, Heraklion 71410, Crete, Greece
Proceedings of Neuronics Conference (Neuronics)
València, Spain, 2024 February 21st - 23rd
Organizers: Sabina Spiga and Juan Bisquert
Oral, Konstantinos Rogdakis, presentation 008
Publication date: 18th December 2023

Memristors are candidates for scaled-down brain-inspired neuromorphic circuits because of their simple two-terminal (2T) device geometry and in-memory computation capability which can overcome the power limitations of the von Neumann architecture. Crossbar circuits based on 2T memristors typically require an additional unit such as a transistor for individual node selection. Although highly effective, this approach significantly increases circuit footprint and manufacturing complexity. A memristive device with gate-tunable synaptic functionalities would not only integrate selection functionality at the cell level but could also lead to enriched on-demand learning schemes. Here, a three-terminal (3T) mixed-halide perovskite memristive device with gate-tunable synaptic functions operating at low potentials is demonstrated [1]. The device operation was controlled by both the drain (VD) and gate (VG) potentials, with an extended endurance of >2000 cycles and a state retention of >5000 s. Applying a voltage (Vset) of 20 V across the 50 μm channel switches its conductance from a high-resistance-state (HRS) to low-resistance-state (LRS). A memristive switching mechanism is proposed that is supported by current injection models through a Schottky barrier and Kelvin probe force microscopy data. The simultaneous application of a VG potential is found to further modulate the channel conductance and reduce the operating Vset to 2 V, thus requiring a low electric field of 400 V/cm, which is by a factor of 50× less compared to state-of-the-art literature reports. Gate-tunable retention, endurance and synaptic functionalities were demonstrated, further highlighting the beneficial effect of VG on device operation. By setting appropriate current compliance current, the devices can be operated in volatile I-V switching mode demonstrating extended endurance characteristics [2]. In this diffusive memristor mode, the devices exhibit pulse-amplitude and -frequency characteristics allowing linear conductivity modulation opening the path for the implementation of a leaky integrate-and -fire (LIF) neuron with light and gate tunable functions.

 

[1] Rogdakis, K.; Chatzimanolis, K.; Psaltakis, G.; Tzoganakis, N.; Tsikritzis, D.; Anthopoulos, T. D.; Kymakis, E Mixed-halide perovskite memristors with gate-tunable functions operating at low switching electric fields. Adv. Electron. Mater.2023, 2300424

[2] Rogdakis K., et al. Manuscript in preparation.

The research project is implemented in the framework of H.F.R.I call “Basic research Financing (Horizontal support of all Sciences)” under the National Recovery and Resilience Plan “Greece 2.0” funded by the European Union – NextGenerationEU (H.F.R.I. Project Number:014728).

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