DOI: https://doi.org/10.29363/nanoge.neuronics.2024.013
Publication date: 18th December 2023
Among all known electronic elements, memristors have electrical characteristics most similar to synapses present in living organisms. Obtaining stable and resistant to environmental changes devices will be a milestone towards the construction of easily accessible computing systems free from limitations related to the von Neumann bottleneck.
Analogously to natural synapses, memristors have the ability to resistive memory. To date, the change in aromaticity has been investigated only in single-molecular resistive switches. It was proven that transformation of an aromatic molecule to an antiaromatic one can lead to significant changes in resistance [1]. Here, we investigate the role of aromaticity in macrodevices in terms of resistive memory and synaptic modulation. We used an antiaromatic molecule stabilised by phenyl rings to allow the aromaticity to change upon reduction. On the basis of theoretical and experimental data, we attributed the switching mechanism to redox reactions occurring at the device. Reduction of the material leads to destruction of its antiaromatic behaviour, resulting in a lower conductivity of memristor. Because of the stability of both aromatic states of a molecule, the device has long memory retention and multiple switching reversibility. Furthermore, reduction and oxidation processes occur at low voltages (below 2 V), which can be a basis for energy efficient computer systems. This study provides the foundation for a new kind of memristive switching mechanism that can be a key to the performance improvement of semiconductor memory devices.
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