Effect of oxidized metallic buffer layers in halide 2D perovskite memristors
Antonio Guerrero a
a Universitat Jaume I, Institute of Advanced Materials (INAM) - Spain, Avinguda de Vicent Sos Baynat, Castelló de la Plana, Spain
Proceedings of Neuronics Conference (Neuronics)
València, Spain, 2024 February 21st - 23rd
Organizers: Sabina Spiga and Juan Bisquert
Oral, Antonio Guerrero, presentation 018
DOI: https://doi.org/10.29363/nanoge.neuronics.2024.018
Publication date: 18th December 2023

The ionic conductivity of halide perovskite is responsible for a memory effect that can be used in resistive memories. Here, the use of oxidized metal buffer layers are shown to control the working mechanism.1 The electronic response turns from being dominated by halide vacancies migration to a response dominated by metal migration. Pre-oxidized electrochemically active metal buffer layers show improved performance in terms of stability and reduced operational voltages. Several metals are evaluated including some of those typically employed in metal oxide memristors such as Ag, Al, Au and Pt. The metal contacts are evaluated together with 3D and 2D perovskites.2,3,4 Silver Iodide as a source of oxidized metal show superior performance to the metals since the oxidized silver can readily follow the electrical field without the need of an electroforming step. Overall, we provide solid understanding on the operational mechanism of halide perovskite memristors that has enabled increased stabilities approaching 105 cycles with well separated states of current and further improvements expected.5

This study forms part of the Advanced Materials programme and was supported by MCIN with funding from European Union NextGenerationEU (PRTR-C17.I1) and by Generalitat Valenciana

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