DOI: https://doi.org/10.29363/nanoge.neuronics.2024.029
Publication date: 18th December 2023
Nonvolatile memory (eNVM) is an essential component of microsystems in the era of internet of things (IoT). With the CMOS technology node scaling below 28 nm, back-end-of-line memories, such as phase change memory (PCM), resistive switching memory (RRAM) and spin-transfer torque magnetic memory (STTRAM) have attracted strong interest due to their compatibility with high-k/metal-gate (HKMG) process, high density and low cost. In addition to non-volatile storage, these devices can display multilevel operation combined with excellent scaling, which makes them extremely promising for neuromorphic computing.
This talk will present an overview of the NVM technology, including their storage principle, maturity, density and reliability. Focusing on PCM and RRAM technologies, I will illustrate and compare their properties and challenges for analog in-memory computing (AIMC) and brain-inspired neuromorphic systems. Subthreshold-operated PCM and RRAM with one-selector(one-resistor structure will also be discussed in the frame of improving the energy efficiency. The most critical roadblocks, such as multilvel precision, reliability and system-level complexity will be discussed.
This work was supported by the EU’s Horizon Europe Research and Innovation Programme under Grant 101070679.
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