Publication date: 15th April 2025
The electronic information devices around us have achieved remarkable development thanks to the technological progress of electronic devices, especially semiconductor devices. However, there are concerns about the performance limits of semiconductor devices, which have been supported by the incredible progress of ultra-fine processing technology. Therefore, in order to overcome the performance limits of conventional semiconductor devices, emphasis is also being placed on the creation of new concept devices with diverse functions and performance, such as brain-inspired devices. In creating such new devices, attention is being focused not only on conventional electronics technology, but also on the fusion of electronics and ionics. We have developed ionic nanoarchitectonics methods that fuse ionics, electronics and nanotechnology[1-4], and have been working on the creation of new devices with various unique functions and performances. We have already developed several devices with diverse functions and excellent performance that improve conventional electronic devices using ionic nanoarchitectonics. These include atomic switches, reservoir devices, decision making devices, artificial synaptic devices, solid-state double-layer electric transistors, on-demand multifunctional devices, and magnetisation and magnetoresistance modulation devices. In particular, the ionic nanoarchitectonics method has found to be a promising method for creating artificial intelligence (AI) devices based on neuro-morphological features, which have attracted attention in recent years. This presentation will focus on the fabrication of neuromorphic devices using the ionic nanoarchitectonics method.