Ionic effects in memristive devices for bio-inspired computing
Shaochuan Chen a
a National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan., 1-chōme-1 Namiki, Tsukuba, Ibaraki 305-0044, Tsukuba, Japan
Proceedings of Neuronics Conference 2025 (Neuronics25)
Tsukuba, Japan, 2025 June 17th - 20th
Organizers: Takashi Tsuchiya, Chu-Chen Chueh, Sabina Spiga and Jung-Yao Chen
Oral, Shaochuan Chen, presentation 018
Publication date: 15th April 2025

Ionic effect has shown to be an effective approach to tune electrical, ferroelectric and magnetic properties of materials, providing new opportunities in developing robust and high-performance devices for sensors, memories, logics, and neuromorphic applications. Memristive devices working with ionic processes have drawn particular attention for implementing artificial synapses and neurons for brain-inspired computing. Ionic control is a novel approach to modulate memristive functionalities to realize synaptic plasticity and neuronal dynamics, due to the similar dynamic electrochemical processes with biological systems. This improves computation efficiency and area efficiency compared with present CMOS based electronic devices. This work will introduce the fundamentals of ionic-based memristive device, including the electrochemical redox reactions and ionic motion processes in solid-state memristive devices. Specifically, ionic process in transition metal oxides and two dimensional materials will be talked. Depending on the ion species and valences, various memristive switching modes with high stability and optimal device performance can be achieved.

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