Memristors from MoS2 by liquid-liquid interface assembly

Jonas Deuermeier^a, Tomás Mingates^a, Daniel Neves^a, Dorina Papanastasiou^a, Miguel Franco^a, Adam Kelly^a, Joseph Neilson^b, Jonathan M. Coleman^b, Luís Mendes^c, João Vaz^d, Sérgio Matos^d, Mohamed Ghatas^e, Luis M. Pessoa^e, Emanuel Carlos^a, Elvira Fortunato^a, Rodrigo Martins^a, Asal Kiazadeh^a

^aCENIMAT|i3N, Department of Materials Science, School of Science and Technology, NOVA University Lisbon and CEMOP/UNINOVA, Caparica, Portugal

^bSchool of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Ireland

^cInstituto de Telecomunicações, Lisbon, Portugal and Instituto Politécnico de Leiria, Leiria, Portugal

^dInstituto de Telecomunicações, Instituto Superior Técnico, Lisbon, Portugal

^eInstitute for Systems and Computer Engineering Technology and Science (INESC TEC)—INESC Technology and Science and FEUP—Faculdade de Engenharia Universidade do Porto, Portugal

Proceedings of Neuronics Conference 2025 (Neuronics25)

Tsukuba, Japan, 2025 June 17th - 20th

Organizers: Takashi Tsuchiya, Chu-Chen Chueh, Sabina Spiga and Jung-Yao Chen

Oral, Jonas Deuermeier, presentation 027
Publication date: 15th April 2025

2D materials are a relatively novel class of resistive switching materials. Neuromorphic devices can be prepared in a variety of ways with these layers, mainly differing between lateral and vertical configurations.[1] Vertical devices are typically advantageous for integration in crossbar arrays. The technique for depositing the 2D materials is the main bottleneck for achieving high quality layers while maintaining fabrication cost-effective, environmentally friendly and compatible with conventional microelectronic processing.

In this contribution, the first vertical solid-state MoS₂ memristors using liquid-liquid interface assembly is presented. This deposition technique produces conformal coatings of > 1 μm wide sheets on large areas and does not require the hazardous gases required for chemical vapor deposition.[2] Devices are presented with contacts by physical vapor deposition and patterned by photolithography as well as with printed metal electrodes. The memristors work both in bipolar and unipolar fashion. Electrical characteristics comprise static IV and pulsed switching parameters, switching energy as well as insertion losses up to 110 GHz.

References:

[1] Huh, W., Lee, D. & Lee, C. Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics. Advanced Materials 32, (2020).

[2] Neilson, J. et al. Production of Ultrathin and High-Quality Nanosheet Networks via Layer-by-Layer Assembly at Liquid–Liquid Interfaces. ACS Nano 18, 32589–32601 (2024).

Acknowledgements:

This work was financed by national funds from FCT - Fundação para a Ciência e a Tecnologia, I.P., in the scope of the projects LA/P/0037/2020, UIDP/50025/2020 and UIDB/50025/2020 of the Associate Laboratory Institute of Nanostructures, Nanomodelling and Nanofabrication – i3N as well as the contract CEECINST/00102/2018. The authors acknowledge the TERRAMETA project, supported by the Smart Networks and Services Joint Undertaking (SNS JU) under the European Union’s Horizon Europe research and innovation programme under Grant Agreement No 101097101, including top-up funding by UK Research and Innovation (UKRI) under the UK government’s Horizon Europe funding guarantee.

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