Publication date: 15th April 2025
Halide perovskite, an old material, has emerged as a class of material with unique optoelectronic properties showing excellent performances for many applications ranging from solar cells to light-emitting and light detection devices. Recently, halide perovskite compounds have been demonstrated as promising candidates for neuromorphic computing devices owing to their material properties such as ambipolar charge transport, strong light absorption, carrier trapping effects, phase transition, ionic conduction, and unique properties like photo-induced ion migration and defect chemistry. In this talk, we will present recent advances of memristors based on halide perovskite compounds. By analyzing their materials chemistry and structure, fundamental operating mechanisms and device architectures, applications of perovskites in memristor and artificial synaptic devices will be presented. In the end, future prospective and opportunities for developing perovskite-based neuromorphic electronics will be discussed
Ref. :
- Po-Kai Kung, Kuang-I Lin, Chun-Sheng Wu, Ming-Hsien Li, Chia-Ru Chan, Raja Rajendran, Chen-Fu Lin, and Peter Chen, Visualization of Ion Migration in an Inorganic Mixed Halide Perovskite by One-Photon and Multiphoton Absorption: Effect of Guanidinium A‐Site Cation Incorporation, J. Phys. Chem. Lett. 2022, 13, 6944−6955
- Po-Kai Kung, Ming-Hsien Li, Chen-Fu Lin and Peter Chen, How Temperature Impacts Material Properties and Photovoltaic Performance of Mixed-Halide Perovskite via Light-induced Ion Migration, J. Mater. Chem. C, 2024, 12, 11181- 11191
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