Publication date: 15th April 2025
Memristive devices have significantly developed in the last decade, expanding their application horizon much beyond memory applications. Especially important is their functionalities as artificial neurons and synapses, making them promising building units for the next generation bio-inspired neuromorphic hardware. Despite a lot has been learned about materials design and the operation principles of memristors, recent research has shown that fundamentals can still be significantly amended, demonstrating new operation principles and functionalities.
In this contribution, the operating principles and electrochemical fundamentals of biological and memristive artificial neurons and synapses will be discussed as well as new aspects on materials design and its influence on the physicochemical processes and resulting functionalities of both ECM (CBRAM) and VCM (OxRAM) devices. The effects of the materials and thicknesses of the capping layer appear of special importance and as well the thicknesses and combination of thicknesses of all involved layers. The selection of different materials is changing the electrochemical nanoionics processes and as well the performance of the memrsitors. For reliable performance the device stack should be considered as a whole, and materials used in the stack and their thicknesses should be coordinated and harmonised.
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