Vacuum-deposited Vertical Perovskite Photoconductors
Serhii Derenko b, Lucía Martínez-Goyeneche b, Alejandra Silva-Mayo b, Daniel Tordera b, Michele Sessolo b
a Institute of Molecular Science (ICMol), University of Valencia, c/Catedrático José Beltrán 2, Paterna, 46980 Valencia, Spain.
b University of Valencia, Carrer Sant Lluís Beltrán, 2, Paterna, Spain
Proceedings of Perovskite and Organic Semiconductors for Next-Generation Photodetectors and Space Application (NextPDs)
Dubrovnik, Croatia, 2024 June 10th - 11th
Organizers: Michele Sessolo, Beatrice Fraboni and Marisé Garcia-Batlle
Oral, Serhii Derenko, presentation 025
Publication date: 19th April 2024

Photoconductors are a type of photodetector consisting in a semiconductor in direct contact with two electrodes. They are typically built in a lateral configuration which, however, limits their performance due to the large electrode spacing. In this work, we evaluate vertical vacuum-deposited p-i-p perovskite photoconductor, where organic hole transport layers (HTLs), both intrinsic and doped, are employed at the perovskite/electrode interface. The effect of the HTL on the performance of the photoconductors is studied, and both the HTL thickness and dopant concentration are analysed. When the perovskite active layer is between intrinsic HTLs the dark current is drastically reduced, especially when these layers are made thicker. Importantly, when a combination of intrinsic and doped HTLs are used, the photoconductors exhibit the benefit from both layers, i.e. reduction of dark currents and enhanced charge extraction/transport.

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