Investigating Two-Step MAPbI3 Thin Film Formation during Spin Coating by Simultaneous in Situ Absorption and Photoluminescence Spectroscopy
Chauhan Mihirsinh a b, Yu Zhong a c, Konstantin Schötz a, Brijesh Tripathi b, Anna Köhler a d, Sven Huettner c, Fabian Panzer a
a Soft Matter Optoelectronics, University of Bayreuth, Germany, Bayreuth, Germany
b School of Technology, Pandit Deendayal Petroleum University, India, India
c Department of Chemistry, University of Bayreuth, DE, Germany
d Bayreuth Institute of Macromolecular Research (BIMF), University of Bayreuth, Germany, Bayreuth, Germany
International Conference on Hybrid and Organic Photovoltaics
Proceedings of Online International Conference on Hybrid and Organic Photovoltaics (OnlineHOPV20)
Online, Spain, 2020 May 26th - 29th
Organizers: Tracey Clarke, James Durrant, Annamaria Petrozza and Trystan Watson
Poster, Yu Zhong, 094
Publication date: 22nd May 2020
ePoster: 

Optoelectronic devices based on hybrid perovskites have drawn much attention in recent years mainly focused on optimizing their film properties. However, a fundamental understanding of the perovskite film formation dynamics, also for the widely-used and low-cost solution processing, has not yet been addressed. Here we apply in-situ optical spectroscopy during the two-step film formation of the model halide perovskite MAPbI3 via spin coating. We identify and analyze in detail the optical features that occur in photoluminescence (PL) and corresponding absorption spectra during processing. We find that the film formation takes place in five consecutive steps, including the formation of a MAPbI3 capping layer via an interface crystallization and the occurrence of an intense dissolution-recrystallization process. Consideration of confinement and self-absorption effects in the PL spectra, together with consideration of the corresponding absorption spectra allows to quantify the growth rate of the initial interface crystallization to be 11 nm/s for our processing conditions. We find the main dissolution recrystallization process to happen with a rate of 445 nm/s, emphasizing its importance to the overall processing.

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