Transient Photovoltage and Differential Charging to Determine Charge Carrier Kinetics in Perovskite Solar Cells Under Realistic Operating Conditions
Richard Pacalaj a b, Jiaying Wu b, Tian Du b c, James Durran a b
a Center for Plastic Electronics, Imperial College London, South Kensington Campus, London, United Kingdom
b Department of Chemistry, Imperial College London, South Kensington Campus London, London, United Kingdom
c Department of Materials, Imperial College London, United Kingdom, Prince’s Consort Road, South Kensington Campus, London, United Kingdom
International Conference on Hybrid and Organic Photovoltaics
Proceedings of Online International Conference on Hybrid and Organic Photovoltaics (OnlineHOPV20)
Online, Spain, 2020 May 26th - 29th
Organizers: Tracey Clarke, James Durrant, Annamaria Petrozza and Trystan Watson
Poster, Richard Pacalaj, 115
Publication date: 22nd May 2020
ePoster: 

Optoelectronic techniques such as the combination of transient photovoltage/photocurrent (TPV/TPC) and differential capacitance measurements have been instrumental in furthering our understanding of how the charge carrier kinetics in the device under operating conditions by directly relating the charge in the device to the charge carrier lifetime. Thereby, the recombination order (δ) can be calculated.
Examples are the investigations on the effect of partial halide substitution [1], perovskite crystallinity [2], and different hole transport layers [3]. Recently, there has been some debate about the influence of the device capacity on the correct interpretation of measured lifetimes and charge carrier densities [4], [5]. Here we demonstrate the validity of our charge carrier lifetime and device capacitance values for two typical solution processed p-i-n devices with differing perovskite quality. Adequately analysed, Transient Photovoltage and Differential Capacitance offer a facile route to qualitatively compare charge carrier kinetics across devices as well as determening accurate values for the combined recombination order (bulk first order and second order processes, surface recombination etc.) of the device.

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