Temperature Dependent Ionic Conduction in Methylammonium Lead Halide Perovskite Transistor
Mithun C.A. a, Soumya Dutta a, Venkatakrishnan Parthasarathy b
a Department of Electrical Engineering,Indian Institute of Technology Madras, Chennai, India, Chennai, India
b Department of Chemistry,Indian Institute of Technology Madras, Chennai, India, Chennai, India
Proceedings of Online International Conference on Hybrid and Organic Photovoltaics (OnlineHOPV20)
Online, Spain, 2020 May 26th - 29th
Organizers: Tracey Clarke, James Durrant, Annamaria Petrozza and Trystan Watson
Poster, Mithun C.A., 128
Publication date: 22nd May 2020
ePoster: 

        In recent years, organic-inorganic hybrid perovskites (OIHPs) have emerged as a promising material in organic and hybrid electronics, attributing to their excellent electrical and optical properties, ease of synthesis and solution processability. Even though there have been a tremendous achievement in the area of solar cell, very few efforts have been dedicated to use OIHPs towards thin film transistor (TFT) applications. We have successfully fabricated perovskite based transistors using methylammonium Lead halide as the semiconducting material on polymer dielectric. In this work, we demonstrate the performance of the devices with channel length as low as 50 µm, showing ambipolar transistor characteristics at room temperature.

        A number of studies have considered the possibility that ionic migration and ferroelectric polarization are major processes in perovskite solar cells, even though substantial debate exists therein [1]. Ionic migration has been observed in a number of oxide and halide materials adopting the perovskite structure, and has recently been studied experimentally and computationally in methylammonium Lead halides. Here we discuss the nature of electrical instabilities in a bottom gate top contact transistor based on MAPbI3. We observe more than three order of magnitude change in output characteristics of FETs by reducing the temperature from 300 K to 200 K due to reduction in ionic charge transport within the films of  MAPbI3 [2] .

The authors would like to acknowledge the Department of Science & Technology (DST-CERI, Govt. of India) for project funding, and Centre for NEMS and Nanophononics (CNNP-IIT Madras) for providing fabrication facility.

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