Proceedings of Online nanoGe Fall Meeting 20 (OnlineNFM20)
Publication date: 4th October 2020
The optical absorptance A of a semiconductor layer is the ratio between the absorbed and incident energy. It was shown experimentally that, after corrections due to local-field effects, the absorptance of thin InAs layers is characterized by very clear steps corresponding to nA0, where n is an integer and A0 is the product of pi and the fine structure constant [1]. Remarkably, the quantum of absorptance was originally found for graphene monolayers, in a wide energy region [2]. In both cases, the explanation of this observation was provided on the basis of simplified calculations applied to a two-band model. In order to go beyond these approximations, we present atomistic multi-band tight-binding calculations of the absorptance of different types of semiconductor layers. We confirm that, in absence of strong excitonic effects, A is characterized by clear steps which can be related to A0. The cases of layers of InAs and PbSe are studied in detail, taking into account the complex band structure of these materials. In the case of InAs, remarkable agreement with experiments is found. The origin of the quantization is discussed.
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