Proceedings of Online nanoGe Fall Meeting 20 (OnlineNFM20)
Publication date: 4th October 2020
Recent advancements in perovskite solar cell performance were achieved by stabilizing the α-phase of FAPbI3 perovskites in nip-type cell architectures, enabling power conversion efficiencies (PCEs) of 25.2%. However, these advancements could not be directly translated into similar PCE improvements in pin-type perovskite cells which limits the possibilities to create highly efficient and stable perovskite photovoltaic cells. We fabricated a high-quality double-cation perovskite (MA0.07FA0.93PbI3) with low bandgap energy (1.54 eV) using a two-step approach on a standard p-type polymer (PTAA). The fabricated neat perovskite films exhibit large grains ( 1 µm) allowing to reach external photoluminescence quantum yields (PLQYs) of 20% with an unprecedented charge carrier lifetime of over 18 µs without further passivation. The exceptional opto-electronic quality of the neat material was translated into high efficiency pin-type cells with PCEs of up to 22.5% with improved stability under illumination. The low-gap cells (1.54 eV) stand out by their exceptional fill factors of 83% due to reduced charge transport losses and high short-circuit currents ( 24 mAcm-2). Using intensity dependent QFLS measurements, we quantify an implied PCE of 28.4% in the neat material which can be realized upon minimizing interfacial recombination and a further improvement of charge extraction.