Stable double cation perovskites with 18 µs lifetime and high luminescence yield for efficient inverted perovskite solar cells
Emilio Gutierrez-Partida a, Hannes Hempel b, Sebastian Caicedo-Davila b, Meysam Raoufi a, Francisco Peña-Camargo a, Max Grischek a c, René Gunder b, Jonas Diekmann a, Pietro Caprioglio a c, Kai O. Brinkmann d, Hans Kobler e, Thomas Riedl d, Antonio Abate e, Daniel Abou-Ras b, Thomas Unold b, Dieter Neher a, Martin Stolterfoht a
a University of Potsdam, Institute of Physics and Astronomy, Karl-Liebknecht-Str 24-25, Potsdam, 14476, Germany
b Helmholtz-Zentrum Berlin, Department Structure and Dynamics of Energy Materials, Berlin, Germany
c Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Young Investigator Group Perovskite Tandem Solar Cells, Berlin, Germany
d University of Wuppertal, Germany, Rainer-Gruenter-Straße, 21, Wuppertal, Germany
e Helmholtz-Zentrum Berlin für Materialien und Energie, Young Investigator Group Active Materials and interfaces for stable perovskite solar cells, Kekulestraße, 5, Berlin, Germany
Materials for Sustainable Development Conference (MATSUS)
Proceedings of Online nanoGe Fall Meeting 20 (OnlineNFM20)
#PerFun20. Perovskite I: Solar Cells and Related Optoelectronics
Online, Spain, 2020 October 20th - 23rd
Organizers: Mónica Lira-Cantú and Mohammad Nazeeruddin
Contributed talk, Emilio Gutierrez-Partida, presentation 155
Publication date: 4th October 2020

Recent advancements in perovskite solar cell performance were achieved by stabilizing the α-phase of FAPbI3 perovskites in nip-type cell architectures, enabling power conversion efficiencies (PCEs) of 25.2%. However, these advancements could not be directly translated into similar PCE improvements in pin-type perovskite cells which limits the possibilities to create highly efficient and stable perovskite photovoltaic cells. We fabricated a high-quality double-cation perovskite (MA0.07FA0.93PbI3) with low bandgap energy (1.54 eV) using a two-step approach on a standard p-type polymer (PTAA). The fabricated neat perovskite films exhibit large grains ( 1 µm) allowing to reach external photoluminescence quantum yields (PLQYs) of 20% with an unprecedented charge carrier lifetime of over 18 µs without further passivation. The exceptional opto-electronic quality of the neat material was translated into high efficiency pin-type cells with PCEs of up to 22.5% with improved stability under illumination. The low-gap cells (1.54 eV) stand out by their exceptional fill factors of 83% due to reduced charge transport losses and high short-circuit currents ( 24 mAcm-2). Using intensity dependent QFLS measurements, we quantify an implied PCE of 28.4% in the neat material which can be realized upon minimizing interfacial recombination and a further improvement of charge extraction.

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